Power MOSFET
iM5226 Mass production
100V P-channel MOSFET, 75 mΩ, TO252A-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -22A
- Drain current, ID @ 100°C
- -15A
- Rds(on) max @ VGS = 10V
- 75 mΩ
- Rds(on) max @ VGS = 4.5V
- 86 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 74 nC
- Package
- TO252A-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 100V, -22A at 25°C
- Rds(on) specified at 10V (75 mΩ max) and 4.5V (86 mΩ max) gate drive
- Qg 74 nC total gate charge (Qgd 8 nC)
- Junction temperature up to 175°C
- TO252A-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -100V |
| VGS | ±20V |
| ID @ 25°C | -22A |
| ID @ 100°C | -15A |
| PD | 83W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 75 mΩ |
| Rds(on) @ VGS = 4.5V | 86 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 4200 pF |
| Coss | 94 pF |
| Crss | 67 pF |
| Gate charge | |
| Qg | 74 nC |
| Qgs | 17 nC |
| Qgd | 8 nC |
| Switching | |
| td(on) | 9 ns |
| tr | 42 ns |
| td(off) | 110 ns |
| tf | 88 ns |
| Body diode | |
| trr | 30 ns |
| Qrr | 45 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5226?
- iM5226 is a 100V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L package.
- What are the key ratings of iM5226?
- iM5226 is rated 100V VDS and -22A at 25°C, with Rds(on) of 75 mΩ max at VGS = 10V and 86 mΩ max at 4.5V.
- Is iM5226 in production?
- iM5226 is in mass production. Samples are available from inergy.
Need iM5226 samples or design help?
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