Power MOSFET
iM5210 Mass production
100V P-channel MOSFET, 215 mΩ, TO252A-3L/TO252B-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -10A
- Drain current, ID @ 100°C
- -6.6A
- Rds(on) max @ VGS = 10V
- 215 mΩ
- Rds(on) max @ VGS = 4.5V
- 230 mΩ
- Gate threshold, VGS(th)
- -2.5V
- Total gate charge, Qg
- 26.7 nC
- Package
- TO252A-3L/TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 100V, -10A at 25°C
- Rds(on) specified at 10V (215 mΩ max) and 4.5V (230 mΩ max) gate drive
- Qg 26.7 nC total gate charge (Qgd 3.5 nC)
- Junction temperature up to 150°C
- TO252A-3L/TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -100V |
| VGS | ±20V |
| ID @ 25°C | -10A |
| ID @ 100°C | -6.6A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 215 mΩ |
| Rds(on) @ VGS = 4.5V | 230 mΩ |
| VGS(th) | -2.5V |
| Capacitance | |
| Ciss | 1546 pF |
| Coss | 38 pF |
| Crss | 30 pF |
| Gate charge | |
| Qg | 26.7 nC |
| Qgs | 6.2 nC |
| Qgd | 3.5 nC |
| Switching | |
| td(on) | 15 ns |
| tr | 50 ns |
| td(off) | 240 ns |
| tf | 110 ns |
| Body diode | |
| trr | 40 ns |
| Qrr | 38 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5210?
- iM5210 is a 100V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L/TO252B-3L package.
- What are the key ratings of iM5210?
- iM5210 is rated 100V VDS and -10A at 25°C, with Rds(on) of 215 mΩ max at VGS = 10V and 230 mΩ max at 4.5V.
- Is iM5210 in production?
- iM5210 is in mass production. Samples are available from inergy.
Need iM5210 samples or design help?
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