Power MOSFET
iMN180P10G Mass production
100V P-channel MOSFET, 20 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -73A
- Drain current, ID @ 100°C
- -51A
- Rds(on) max @ VGS = 10V
- 20 mΩ
- Rds(on) max @ VGS = 4.5V
- 24 mΩ
- Gate threshold, VGS(th)
- -2.5V
- Total gate charge, Qg
- 245 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 100V, -73A at 25°C
- Rds(on) specified at 10V (20 mΩ max) and 4.5V (24 mΩ max) gate drive
- Qg 245 nC total gate charge (Qgd 27 nC)
- Junction temperature up to 175°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -100V |
| VGS | ±20V |
| ID @ 25°C | -73A |
| ID @ 100°C | -51A |
| PD | 250W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 20 mΩ |
| Rds(on) @ VGS = 4.5V | 24 mΩ |
| VGS(th) | -2.5V |
| Capacitance | |
| Ciss | 14265 pF |
| Coss | 301 pF |
| Crss | 30 pF |
| Gate charge | |
| Qg | 245 nC |
| Qgs | 56 nC |
| Qgd | 27 nC |
| Switching | |
| td(on) | 13 ns |
| tr | 49 ns |
| td(off) | 329 ns |
| tf | 115 ns |
| Body diode | |
| trr | 41 ns |
| Qrr | 75 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN180P10G?
- iMN180P10G is a 100V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iMN180P10G?
- iMN180P10G is rated 100V VDS and -73A at 25°C, with Rds(on) of 20 mΩ max at VGS = 10V and 24 mΩ max at 4.5V.
- Is iMN180P10G in production?
- iMN180P10G is in mass production. Samples are available from inergy.
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