Power MOSFET
iM5216 Mass production
100V P-channel MOSFET, 97 mΩ, TO252B-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -17.5A
- Drain current, ID @ 100°C
- -11A
- Rds(on) max @ VGS = 10V
- 97 mΩ
- Rds(on) max @ VGS = 4.5V
- 115 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 54 nC
- Package
- TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 100V, -17.5A at 25°C
- Rds(on) specified at 10V (97 mΩ max) and 4.5V (115 mΩ max) gate drive
- Qg 54 nC total gate charge (Qgd 6.2 nC)
- Junction temperature up to 150°C
- TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -100V |
| VGS | ±20V |
| ID @ 25°C | -17.5A |
| ID @ 100°C | -11A |
| PD | 62.5W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 97 mΩ |
| Rds(on) @ VGS = 4.5V | 115 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 3049 pF |
| Coss | 68 pF |
| Crss | 67 pF |
| Gate charge | |
| Qg | 54 nC |
| Qgs | 13 nC |
| Qgd | 6.2 nC |
| Switching | |
| td(on) | 7.2 ns |
| tr | 45 ns |
| td(off) | 98 ns |
| tf | 80 ns |
| Body diode | |
| trr | 29 ns |
| Qrr | 43 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5216?
- iM5216 is a 100V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252B-3L package.
- What are the key ratings of iM5216?
- iM5216 is rated 100V VDS and -17.5A at 25°C, with Rds(on) of 97 mΩ max at VGS = 10V and 115 mΩ max at 4.5V.
- Is iM5216 in production?
- iM5216 is in mass production. Samples are available from inergy.
Need iM5216 samples or design help?
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