Power MOSFET
iM5218 Mass production
100V P-channel MOSFET, 74 mΩ, TO252A-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -23A
- Drain current, ID @ 100°C
- -14A
- Rds(on) max @ VGS = 10V
- 74 mΩ
- Rds(on) max @ VGS = 4.5V
- 83 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 73 nC
- Package
- TO252A-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 100V, -23A at 25°C
- Rds(on) specified at 10V (74 mΩ max) and 4.5V (83 mΩ max) gate drive
- Qg 73 nC total gate charge (Qgd 8.4 nC)
- Junction temperature up to 150°C
- TO252A-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -100V |
| VGS | ±20V |
| ID @ 25°C | -23A |
| ID @ 100°C | -14A |
| PD | 83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 74 mΩ |
| Rds(on) @ VGS = 4.5V | 83 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 4258 pF |
| Coss | 95 pF |
| Crss | 74 pF |
| Gate charge | |
| Qg | 73 nC |
| Qgs | 18 nC |
| Qgd | 8.4 nC |
| Switching | |
| td(on) | 9.1 ns |
| tr | 45 ns |
| td(off) | 100 ns |
| tf | 86 ns |
| Body diode | |
| trr | 33 ns |
| Qrr | 56 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5218?
- iM5218 is a 100V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L package.
- What are the key ratings of iM5218?
- iM5218 is rated 100V VDS and -23A at 25°C, with Rds(on) of 74 mΩ max at VGS = 10V and 83 mΩ max at 4.5V.
- Is iM5218 in production?
- iM5218 is in mass production. Samples are available from inergy.
Need iM5218 samples or design help?
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