Power MOSFET
iM1820 Mass production
100V P-channel MOSFET, 74 mΩ, DFN3.3X3.3A-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -11A
- Drain current, ID @ 100°C
- -7A
- Rds(on) max @ VGS = 10V
- 74 mΩ
- Rds(on) max @ VGS = 4.5V
- 83 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 76 nC
- Package
- DFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 100V, -11A at 25°C
- Rds(on) specified at 10V (74 mΩ max) and 4.5V (83 mΩ max) gate drive
- Qg 76 nC total gate charge (Qgd 8.4 nC)
- Junction temperature up to 150°C
- DFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -100V |
| VGS | ±20V |
| ID @ 25°C | -11A |
| ID @ 100°C | -7A |
| PD | 20W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 74 mΩ |
| Rds(on) @ VGS = 4.5V | 83 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 4363 pF |
| Coss | 95 pF |
| Crss | 59 pF |
| Gate charge | |
| Qg | 76 nC |
| Qgs | 16 nC |
| Qgd | 8.4 nC |
| Switching | |
| td(on) | 8 ns |
| tr | 13 ns |
| td(off) | 121 ns |
| tf | 42 ns |
| Body diode | |
| trr | 29 ns |
| Qrr | 44 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1820?
- iM1820 is a 100V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM1820?
- iM1820 is rated 100V VDS and -11A at 25°C, with Rds(on) of 74 mΩ max at VGS = 10V and 83 mΩ max at 4.5V.
- Is iM1820 in production?
- iM1820 is in mass production. Samples are available from inergy.
Need iM1820 samples or design help?
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