SiC MOSFETs & SiC SBDs
High Efficiency. Low Loss. High Reliability. Built for 1200V and Beyond. The brain and guardian of AI cooling infrastructure power stages.
The Brain & Guardian of AI Cooling Infrastructure
Intelligent power. Precision control. Superior efficiency. inergy SiC power devices keep AI data centers cool, efficient, and always on — delivering the high-voltage switching performance demanded by next-generation AI thermal management systems.
SiC MOSFETs
1200V Platform · High Speed · High Efficiency · Built for 1200V and Beyond. TO-247 and SMD packages available.
SiC SBDs
650V / 1200V Platform · Ultra-Low Loss · Zero Reverse Recovery · Superior reliability for rectification in AI PSUs.
Suggested SiC devices by power stage
SiC MOSFETs for the PFC, LLC and 800VDC stages from the AI-server design guide, and the 650V SiC Schottky family for boost PFC. New SiC parts show preliminary values — ask us for data.
Tap a row for the full specs, where the part is used, and the datasheet.
| Part number | Type | VDS / VRRM | Rds(on) max | ID / IF | Qg | Package | Status | Add to sample cart |
|---|
SiC MOSFET Rds(on) marked * is the nominal class from the part code, and HVDC values are typical. For SiC SBDs the voltage column is VRRM and the current column is IF max. Confirm against the datasheet before design freeze.
SiC MOSFETs — 1200V
High speed, high efficiency SiC power MOSFETs built for 1200V and beyond. Designed for the harshest AI infrastructure power conversion environments.
| Specification | Value |
|---|---|
| Voltage Rating | 1200V Platform |
| Technology | Silicon Carbide (SiC) N-Channel |
| Switching Speed | High Speed |
| Efficiency | High — lower switching loss vs Si IGBT |
| Thermal Performance | High junction temp stable |
| Package | TO-247 / SMD options |
| Application | AI Rack PSU, PFC, HV Motor Drive |
Why SiC MOSFET for AI Infrastructure?
- Lower switching loss — faster switching enables higher frequency, smaller magnetics
- Lower conduction loss — ultra-low RDS(on) at high temperature, stable performance
- High-temperature operation — junction temp stability critical for AI rack thermal environments
- Higher efficiency PSU — supports 80 Plus Titanium and beyond for AI rack power targets
- Smaller magnetics — higher switching frequency reduces transformer and inductor size
SiC SBDs — Zero Reverse Recovery
Superior performance SiC Schottky Barrier Diodes for high-efficiency rectification. Zero reverse recovery eliminates switching spikes — critical for noise-sensitive AI power systems.
| Specification | Value |
|---|---|
| Voltage Rating | 650V / 1200V |
| Technology | Silicon Carbide Schottky |
| Reverse Recovery | ~Zero (vs Si diode) |
| Forward Recovery | ~Zero |
| Switching Loss | Ultra-Low |
| Thermal Stability | High — stable at elevated junction temp |
| Package | TO-247 / SMD / SiP available |
Key Performance Advantages
- Zero reverse recovery charge — eliminates switching spikes in PFC and inverter circuits
- Zero forward recovery — eliminates forward voltage overshoot transients
- Ultra-low switching loss — enables high-frequency operation with minimal EMI
- Temperature-stable forward voltage — positive Vf coefficient enables parallel operation
- Superior reliability — SiC technology ensures long-term stable performance in AI infrastructure
650V SiC Schottky Barrier Diode — Product Family
Compare all eight 650 V SiC SBDs and download datasheets. Click any column header to sort.
| Part Number | Package | VRRM (V) | Max IF (A) | VF (V) | Ptot (W) | Tj (°C) | RthJC (°C/W) | Datasheet |
|---|---|---|---|---|---|---|---|---|
| iS065C04CD2 | TO252-2L | 650 | 4 | 1.3 | 71 | 175 | 2.10 | PDF ↓ |
| iS065C04CE | TO220A-2L | 650 | 4 | 1.3 | 70 | 175 | 2.10 | PDF ↓ |
| iS065C06CD2 | TO252-2L | 650 | 6 | 1.3 | 88 | 175 | 1.70 | PDF ↓ |
| iS065C06CE | TO220A-2L | 650 | 6 | 1.3 | 91 | 175 | 1.64 | PDF ↓ |
| iS065C08CD2 | TO252-2L | 650 | 8 | 1.3 | 100 | 175 | 1.50 | PDF ↓ |
| iS065C08CE | TO220A-2L | 650 | 8 | 1.3 | 107 | 175 | 1.40 | PDF ↓ |
| iS065C10CD2 | TO252-2L | 650 | 10 | 1.3 | 109 | 175 | 1.24 | PDF ↓ |
| iS065C10CE | TO220A-2L | 650 | 10 | 1.3 | 120 | 175 | 1.24 | PDF ↓ |
// 650 V VRRM across the family · VF typical · Tj(max) 175 °C · datasheets open in a new tab
SiC Device Applications
| Application | Device | Rating | Role | Key Benefit |
|---|---|---|---|---|
| AI Rack PSU (Server PSU) | SiC MOSFET | 1200V | PFC primary switch, LLC primary | High efficiency, 80+ Titanium support |
| Active PFC Air Cooler | SiC MOSFET + SBD | 650V / 1200V | Boost switch + rectifier | Ultra-low loss PFC stage, high power factor |
| HV Railway / EC Motor | SiC MOSFET | 1200V | 3-phase inverter switches | High-speed motor drive, low switching loss |
| AI Rack UPS / BBU | SiC MOSFET + SBD | 650V–1200V | Bi-directional converter | High efficiency charge/discharge, fast response |
| Liquid Cooling HV Pump | SiC SBD | 650V | Freewheeling diode | Zero reverse recovery, reduced EMI in pump inverter |
| DC/DC Power Conversion | SiC MOSFET | 1200V | Isolated converter primary | High-frequency operation, compact magnetics |
| Energy Storage System | SiC MOSFET + SBD | 650V–1200V | Bi-directional AC/DC + DC/DC | High-temperature stable, high power density |
Why SiC for AI Infrastructure?
Higher Efficiency
SiC devices dramatically reduce switching and conduction losses versus silicon IGBTs and standard MOSFETs — directly lowering PUE in AI datacenters.
Better Thermal Control
Stable. Reliable. Safe. SiC operates at higher junction temperatures with stable electrical characteristics — enabling smaller, simpler heatsink designs.
Higher Power Density
Higher switching frequency reduces passive component size. Smaller magnetics and capacitors enable denser power supply and power stage designs.
Greener Future
Lower power loss at the silicon level directly reduces carbon footprint of AI infrastructure. Essential for net-zero datacenter targets.
POWERING AI. PROTECTING PERFORMANCE. KEEPING THE FUTURE COOL.
Request SiC Device Samples
Talk to an inergy FAE about your voltage, current, and package requirements for SiC MOSFET and SiC SBD selection in your AI power system.