High Voltage Power

SiC MOSFETs
& SiC SBDs

High Efficiency. Low Loss. High Reliability. Built for 1200V and Beyond. The brain and guardian of AI cooling infrastructure power stages.

SiC MOSFET · 1200V SiC SBD · 650V/1200V Zero Reverse Recovery High Speed Switching
SiC MOSFET Details → SiC SBD Details
inergy SiC MOSFETs and SiC SBDs
SiC · 1200V Platform · Built for AI Infrastructure

The Brain & Guardian
of AI Cooling
Infrastructure

Intelligent power. Precision control. Superior efficiency. iNERGY SiC power devices keep AI data centers cool, efficient, and always on — delivering the high-voltage switching performance demanded by next-generation AI thermal management systems.

SiC MOSFETs
1200V Platform · High Speed · High Efficiency · Built for 1200V and Beyond. TO-247 and SMD packages available.
SiC SBDs
650V / 1200V Platform · Ultra-Low Loss · Zero Reverse Recovery · Superior reliability for rectification in AI PSUs.
View AI Applications →
1200V
SiC MOSFET Rating
650/1200V
SiC SBD Platform
~0
Reverse Recovery (SBD)
HighT°
Stable Operation
SiC MOSFET · 1200V Platform

SiC MOSFETs — 1200V

High speed, high efficiency SiC power MOSFETs built for 1200V and beyond. Designed for the harshest AI infrastructure power conversion environments.

SpecificationValue
Voltage Rating1200V Platform
TechnologySilicon Carbide (SiC) N-Channel
Switching SpeedHigh Speed
EfficiencyHigh — lower switching loss vs Si IGBT
Thermal PerformanceHigh junction temp stable
PackageTO-247 / SMD options
ApplicationAI Rack PSU, PFC, HV Motor Drive

Why SiC MOSFET for AI Infrastructure?

  • Lower switching loss — faster switching enables higher frequency, smaller magnetics
  • Lower conduction loss — ultra-low RDS(on) at high temperature, stable performance
  • High-temperature operation — junction temp stability critical for AI rack thermal environments
  • Higher efficiency PSU — supports 80 Plus Titanium and beyond for AI rack power targets
  • Smaller magnetics — higher switching frequency reduces transformer and inductor size
SiC SBD · 650V / 1200V Platform

SiC SBDs — Zero Reverse Recovery

Superior performance SiC Schottky Barrier Diodes for high-efficiency rectification. Zero reverse recovery eliminates switching spikes — critical for noise-sensitive AI power systems.

SpecificationValue
Voltage Rating650V / 1200V
TechnologySilicon Carbide Schottky
Reverse Recovery~Zero (vs Si diode)
Forward Recovery~Zero
Switching LossUltra-Low
Thermal StabilityHigh — stable at elevated junction temp
PackageTO-247 / SMD / SiP available

Key Performance Advantages

  • Zero reverse recovery charge — eliminates switching spikes in PFC and inverter circuits
  • Zero forward recovery — eliminates forward voltage overshoot transients
  • Ultra-low switching loss — enables high-frequency operation with minimal EMI
  • Temperature-stable forward voltage — positive Vf coefficient enables parallel operation
  • Superior reliability — SiC technology ensures long-term stable performance in AI infrastructure

650V SiC Schottky Barrier Diode — Product Family

Compare all eight 650 V SiC SBDs and download datasheets. Click any column header to sort.

Part Number Package VRRM (V) Max IF (A) VF (V) Ptot (W) Tj (°C) RthJC (°C/W) Datasheet
iS065C04CD2TO252-2L65041.3711752.10PDF ↓
iS065C04CETO220A-2L65041.3701752.10PDF ↓
iS065C06CD2TO252-2L65061.3881751.70PDF ↓
iS065C06CETO220A-2L65061.3911751.64PDF ↓
iS065C08CD2TO252-2L65081.31001751.50PDF ↓
iS065C08CETO220A-2L65081.31071751.40PDF ↓
iS065C10CD2TO252-2L650101.31091751.24PDF ↓
iS065C10CETO220A-2L650101.31201751.24PDF ↓

// 650 V VRRM across the family · VF typical · Tj(max) 175 °C · datasheets open in a new tab

AI Infrastructure Applications

SiC Device Applications

ApplicationDeviceRatingRoleKey Benefit
AI Rack PSU (Server PSU)SiC MOSFET1200VPFC primary switch, LLC primaryHigh efficiency, 80+ Titanium support
Active PFC Air CoolerSiC MOSFET + SBD650V / 1200VBoost switch + rectifierUltra-low loss PFC stage, high power factor
HV Railway / EC MotorSiC MOSFET1200V3-phase inverter switchesHigh-speed motor drive, low switching loss
AI Rack UPS / BBUSiC MOSFET + SBD650V–1200VBi-directional converterHigh efficiency charge/discharge, fast response
Liquid Cooling HV PumpSiC SBD650VFreewheeling diodeZero reverse recovery, reduced EMI in pump inverter
DC/DC Power ConversionSiC MOSFET1200VIsolated converter primaryHigh-frequency operation, compact magnetics
Energy Storage SystemSiC MOSFET + SBD650V–1200VBi-directional AC/DC + DC/DCHigh-temperature stable, high power density
Performance Advantages

Why SiC for AI Infrastructure?

🔥
Higher Efficiency
SiC devices dramatically reduce switching and conduction losses versus silicon IGBTs and standard MOSFETs — directly lowering PUE in AI datacenters.
🌡️
Better Thermal Control
Stable. Reliable. Safe. SiC operates at higher junction temperatures with stable electrical characteristics — enabling smaller, simpler heatsink designs.
📦
Higher Power Density
Higher switching frequency reduces passive component size. Smaller magnetics and capacitors enable denser power supply and power stage designs.
🌱
Greener Future
Lower power loss at the silicon level directly reduces carbon footprint of AI infrastructure. Essential for net-zero datacenter targets.

POWERING AI.   PROTECTING PERFORMANCE.   KEEPING THE FUTURE COOL.

// SiC device samples

Request SiC Device
Samples

Talk to an inergy FAE about your voltage, current, and package requirements for SiC MOSFET and SiC SBD selection in your AI power system.

LV MOSFETs (30–200V)

Cooling Solutions

Power Semiconductors

Technology

Company