Power MOSFET
iMN70P03K Mass production
30V P-channel MOSFET, 6.5 mΩ, TO252B-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -70A
- Rds(on) max @ VGS = 10V
- 6.5 mΩ
- Rds(on) max @ VGS = 4.5V
- 11 mΩ
- Gate threshold, VGS(th)
- -3V
- Total gate charge, Qg
- 106 nC
- Package
- TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -70A at 25°C
- Rds(on) specified at 10V (6.5 mΩ max) and 4.5V (11 mΩ max) gate drive
- Qg 106 nC total gate charge (Qgd 13.4 nC)
- Junction temperature up to 150°C
- TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -70A |
| PD | 50W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 6.5 mΩ |
| Rds(on) @ VGS = 4.5V | 11 mΩ |
| VGS(th) | -3V |
| Capacitance | |
| Ciss | 7060 pF |
| Coss | 595 pF |
| Crss | 243 pF |
| Gate charge | |
| Qg | 106 nC |
| Qgs | 27 nC |
| Qgd | 13.4 nC |
| Switching | |
| td(on) | 87 ns |
| tr | 140 ns |
| td(off) | 664 ns |
| tf | 299 ns |
| Body diode | |
| trr | 29 ns |
| Qrr | 20 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN70P03K?
- iMN70P03K is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252B-3L package.
- What are the key ratings of iMN70P03K?
- iMN70P03K is rated 30V VDS and -70A at 25°C, with Rds(on) of 6.5 mΩ max at VGS = 10V and 11 mΩ max at 4.5V.
- Is iMN70P03K in production?
- iMN70P03K is in mass production. Samples are available from inergy.
Need iMN70P03K samples or design help?
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