Power MOSFET
iM2307 Mass production
30V P-channel MOSFET, 80 mΩ, SOT23-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -3A
- Drain current, ID @ 100°C
- -2A
- Rds(on) max @ VGS = 10V
- 80 mΩ
- Rds(on) max @ VGS = 4.5V
- 140 mΩ
- Gate threshold, VGS(th)
- -3V
- Total gate charge, Qg
- 10 nC
- Package
- SOT23-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -3A at 25°C
- Rds(on) specified at 10V (80 mΩ max) and 4.5V (140 mΩ max) gate drive
- Qg 10 nC total gate charge (Qgd 1.6 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -3A |
| ID @ 100°C | -2A |
| PD | 1.25W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 80 mΩ |
| Rds(on) @ VGS = 4.5V | 140 mΩ |
| VGS(th) | -3V |
| Capacitance | |
| Ciss | 650 pF |
| Coss | 90 pF |
| Crss | 70 pF |
| Gate charge | |
| Qg | 10 nC |
| Qgs | 2.1 nC |
| Qgd | 1.6 nC |
| Switching | |
| td(on) | 9 ns |
| tr | 8 ns |
| td(off) | 25 ns |
| tf | 6 ns |
| Body diode | |
| trr | 12 ns |
| Qrr | 9 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2307?
- iM2307 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM2307?
- iM2307 is rated 30V VDS and -3A at 25°C, with Rds(on) of 80 mΩ max at VGS = 10V and 140 mΩ max at 4.5V.
- Is iM2307 in production?
- iM2307 is in mass production. Samples are available from inergy.
Need iM2307 samples or design help?
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