Power MOSFET
iM1814 Mass production
30V P-channel MOSFET, 21 mΩ, PDFN3.3X3.3A-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -25.6A
- Rds(on) max @ VGS = 10V
- 21 mΩ
- Rds(on) max @ VGS = 4.5V
- 36 mΩ
- Gate threshold, VGS(th)
- -2.5V
- Total gate charge, Qg
- 30 nC
- Package
- PDFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -25.6A at 25°C
- Rds(on) specified at 10V (21 mΩ max) and 4.5V (36 mΩ max) gate drive
- Qg 30 nC total gate charge (Qgd 4.5 nC)
- Junction temperature up to 150°C
- PDFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -25.6A |
| PD | 20.8W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 21 mΩ |
| Rds(on) @ VGS = 4.5V | 36 mΩ |
| VGS(th) | -2.5V |
| Capacitance | |
| Ciss | 1882 pF |
| Coss | 168 pF |
| Crss | 134 pF |
| Gate charge | |
| Qg | 30 nC |
| Qgs | 8.2 nC |
| Qgd | 4.5 nC |
| Switching | |
| td(on) | 21 ns |
| tr | 87 ns |
| td(off) | 218 ns |
| tf | 118 ns |
| Body diode | |
| trr | 19 ns |
| Qrr | 5 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1814?
- iM1814 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM1814?
- iM1814 is rated 30V VDS and -25.6A at 25°C, with Rds(on) of 21 mΩ max at VGS = 10V and 36 mΩ max at 4.5V.
- Is iM1814 in production?
- iM1814 is in mass production. Samples are available from inergy.
Need iM1814 samples or design help?
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