Power MOSFET
iM1804 Mass production
30V P-channel MOSFET, 7.5 mΩ, DFN3.3x3.3A-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±25V
- Drain current, ID @ 25°C
- -54A
- Rds(on) max @ VGS = 10V
- 7.5 mΩ
- Rds(on) max @ VGS = 4.5V
- 11.5 mΩ
- Gate threshold, VGS(th)
- -3V
- Total gate charge, Qg
- 126 nC
- Package
- DFN3.3x3.3A-EP1-8L
- ESD protection
- Yes
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -54A at 25°C
- Rds(on) specified at 10V (7.5 mΩ max) and 4.5V (11.5 mΩ max) gate drive
- Qg 126 nC total gate charge (Qgd 19 nC)
- Junction temperature up to 150°C
- DFN3.3x3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±25V |
| ID @ 25°C | -54A |
| PD | 41W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 7.5 mΩ |
| Rds(on) @ VGS = 4.5V | 11.5 mΩ |
| VGS(th) | -3V |
| Capacitance | |
| Ciss | 5963 pF |
| Coss | 723 pF |
| Crss | 674 pF |
| Gate charge | |
| Qg | 126 nC |
| Qgs | 23 nC |
| Qgd | 19 nC |
| Switching | |
| td(on) | 20 ns |
| tr | 62 ns |
| td(off) | 336 ns |
| tf | 44 ns |
| Body diode | |
| trr | 57 ns |
| Qrr | 18 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1804?
- iM1804 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3.3x3.3A-EP1-8L package.
- What are the key ratings of iM1804?
- iM1804 is rated 30V VDS and -54A at 25°C, with Rds(on) of 7.5 mΩ max at VGS = 10V and 11.5 mΩ max at 4.5V.
- Is iM1804 in production?
- iM1804 is in mass production. Samples are available from inergy.
Need iM1804 samples or design help?
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