Power MOSFET
iM3407 Mass production
30V P-channel MOSFET, 60 mΩ, SOT23-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -3A
- Drain current, ID @ 100°C
- -1.9A
- Rds(on) max @ VGS = 10V
- 60 mΩ
- Rds(on) max @ VGS = 4.5V
- 100 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 11 nC
- Package
- SOT23-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -3A at 25°C
- Rds(on) specified at 10V (60 mΩ max) and 4.5V (100 mΩ max) gate drive
- Qg 11 nC total gate charge (Qgd 1.2 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -3A |
| ID @ 100°C | -1.9A |
| PD | 0.83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 60 mΩ |
| Rds(on) @ VGS = 4.5V | 100 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 619 pF |
| Coss | 83 pF |
| Crss | 65 pF |
| Gate charge | |
| Qg | 11 nC |
| Qgs | 2.6 nC |
| Qgd | 1.2 nC |
| Switching | |
| td(on) | 5.8 ns |
| tr | 24 ns |
| td(off) | 73 ns |
| tf | 39 ns |
| Body diode | |
| trr | 10 ns |
| Qrr | 5.7 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM3407?
- iM3407 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM3407?
- iM3407 is rated 30V VDS and -3A at 25°C, with Rds(on) of 60 mΩ max at VGS = 10V and 100 mΩ max at 4.5V.
- Is iM3407 in production?
- iM3407 is in mass production. Samples are available from inergy.
Need iM3407 samples or design help?
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