Power MOSFET
iM5208 Mass production
30V P-channel MOSFET, 10 mΩ, TO252B-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -48A
- Drain current, ID @ 100°C
- -30A
- Rds(on) max @ VGS = 10V
- 10 mΩ
- Rds(on) max @ VGS = 4.5V
- 16 mΩ
- Gate threshold, VGS(th)
- -3V
- Total gate charge, Qg
- 61 nC
- Package
- TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -48A at 25°C
- Rds(on) specified at 10V (10 mΩ max) and 4.5V (16 mΩ max) gate drive
- Qg 61 nC total gate charge (Qgd 9 nC)
- Junction temperature up to 150°C
- TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -48A |
| ID @ 100°C | -30A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 10 mΩ |
| Rds(on) @ VGS = 4.5V | 16 mΩ |
| VGS(th) | -3V |
| Capacitance | |
| Ciss | 3500 pF |
| Coss | 389 pF |
| Crss | 384 pF |
| Gate charge | |
| Qg | 61 nC |
| Qgs | 13 nC |
| Qgd | 9 nC |
| Switching | |
| td(on) | 37 ns |
| tr | 76 ns |
| td(off) | 428 ns |
| tf | 208 ns |
| Body diode | |
| trr | 19 ns |
| Qrr | 6.9 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5208?
- iM5208 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252B-3L package.
- What are the key ratings of iM5208?
- iM5208 is rated 30V VDS and -48A at 25°C, with Rds(on) of 10 mΩ max at VGS = 10V and 16 mΩ max at 4.5V.
- Is iM5208 in production?
- iM5208 is in mass production. Samples are available from inergy.
Need iM5208 samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.