Power MOSFET
iMN2R0N08G Mass production
80V N-channel MOSFET, 2.6 mΩ, PDFN5X6B-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 80V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 100A
- Drain current, ID @ 100°C
- 100A
- Rds(on) max @ VGS = 10V
- 2.6 mΩ
- Rds(on) max @ VGS = 6V
- 3.8 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 105 nC
- Package
- PDFN5X6B-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 80V, 100A at 25°C
- Rds(on) specified at 10V (2.6 mΩ max) and 6V (3.8 mΩ max) gate drive
- Qg 105 nC total gate charge (Qgd 28 nC)
- Junction temperature up to 175°C
- PDFN5X6B-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 80V |
| VGS | ±20V |
| ID @ 25°C | 100A |
| ID @ 100°C | 100A |
| PD | 300W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 2.6 mΩ |
| Rds(on) @ VGS = 6V | 3.8 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 5531 pF |
| Coss | 845 pF |
| Crss | 62 pF |
| Gate charge | |
| Qg | 105 nC |
| Qgs | 31 nC |
| Qgd | 28 nC |
| Switching | |
| td(on) | 21 ns |
| tr | 78 ns |
| td(off) | 63 ns |
| tf | 53 ns |
| Body diode | |
| trr | 40 ns |
| Qrr | 38 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN2R0N08G?
- iMN2R0N08G is a 80V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6B-EP1-8L package.
- What are the key ratings of iMN2R0N08G?
- iMN2R0N08G is rated 80V VDS and 100A at 25°C, with Rds(on) of 2.6 mΩ max at VGS = 10V and 3.8 mΩ max at 6V.
- Is iMN2R0N08G in production?
- iMN2R0N08G is in mass production. Samples are available from inergy.
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