Power MOSFET
iMN1R5N08GH Mass production
80V N-channel MOSFET, 1.9 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 80V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 200A
- Drain current, ID @ 100°C
- 177A
- Rds(on) max @ VGS = 10V
- 1.9 mΩ
- Rds(on) max @ VGS = 6V
- 3 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 131 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 80V, 200A at 25°C
- Rds(on) specified at 10V (1.9 mΩ max) and 6V (3 mΩ max) gate drive
- Qg 131 nC total gate charge (Qgd 28 nC)
- Junction temperature up to 175°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 80V |
| VGS | ±20V |
| ID @ 25°C | 200A |
| ID @ 100°C | 177A |
| PD | 250W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1.9 mΩ |
| Rds(on) @ VGS = 6V | 3 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 7999 pF |
| Coss | 1077 pF |
| Crss | 52 pF |
| Gate charge | |
| Qg | 131 nC |
| Qgs | 42 nC |
| Qgd | 28 nC |
| Switching | |
| td(on) | 27 ns |
| tr | 73 ns |
| td(off) | 82 ns |
| tf | 45 ns |
| Body diode | |
| trr | 78 ns |
| Qrr | 72 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN1R5N08GH?
- iMN1R5N08GH is a 80V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iMN1R5N08GH?
- iMN1R5N08GH is rated 80V VDS and 200A at 25°C, with Rds(on) of 1.9 mΩ max at VGS = 10V and 3 mΩ max at 6V.
- Is iMN1R5N08GH in production?
- iMN1R5N08GH is in mass production. Samples are available from inergy.
Need iMN1R5N08GH samples or design help?
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