Power MOSFET
iM18115 Mass production
80V N-channel MOSFET, 11.3 mΩ, PDFN3.3X3.3A-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 80V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 44A
- Drain current, ID @ 100°C
- 28A
- Rds(on) max @ VGS = 10V
- 11.3 mΩ
- Rds(on) max @ VGS = 4.5V
- 19 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 32 nC
- Package
- PDFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 80V, 44A at 25°C
- Rds(on) specified at 10V (11.3 mΩ max) and 4.5V (19 mΩ max) gate drive
- Qg 32 nC total gate charge (Qgd 7.9 nC)
- Junction temperature up to 150°C
- PDFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 80V |
| VGS | ±20V |
| ID @ 25°C | 44A |
| ID @ 100°C | 28A |
| PD | 39W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 11.3 mΩ |
| Rds(on) @ VGS = 4.5V | 19 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 1421 pF |
| Coss | 235 pF |
| Crss | 29 pF |
| Gate charge | |
| Qg | 32 nC |
| Qgs | 7.4 nC |
| Qgd | 7.9 nC |
| Switching | |
| td(on) | 7.8 ns |
| tr | 26 ns |
| td(off) | 24 ns |
| tf | 8.5 ns |
| Body diode | |
| trr | 32 ns |
| Qrr | 20 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM18115?
- iM18115 is a 80V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM18115?
- iM18115 is rated 80V VDS and 44A at 25°C, with Rds(on) of 11.3 mΩ max at VGS = 10V and 19 mΩ max at 4.5V.
- Is iM18115 in production?
- iM18115 is in mass production. Samples are available from inergy.
Need iM18115 samples or design help?
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