Power MOSFET
iMN007N08T Mass production
80V N-channel MOSFET, 0.9 mΩ, TOLLA-8L/TOLLB-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 80V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 500A
- Drain current, ID @ 100°C
- 355A
- Rds(on) max @ VGS = 10V
- 0.9 mΩ
- Rds(on) max @ VGS = 6V
- 1.5 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 338 nC
- Package
- TOLLA-8L/TOLLB-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 80V, 500A at 25°C
- Rds(on) specified at 10V (0.9 mΩ max) and 6V (1.5 mΩ max) gate drive
- Qg 338 nC total gate charge (Qgd 74 nC)
- Junction temperature up to 175°C
- TOLLA-8L/TOLLB-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 80V |
| VGS | ±20V |
| ID @ 25°C | 500A |
| ID @ 100°C | 355A |
| PD | 450W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 0.9 mΩ |
| Rds(on) @ VGS = 6V | 1.5 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 20427 pF |
| Coss | 2566 pF |
| Crss | 611 pF |
| Gate charge | |
| Qg | 338 nC |
| Qgs | 100 nC |
| Qgd | 74 nC |
| Switching | |
| td(on) | 47 ns |
| tr | 122 ns |
| td(off) | 226 ns |
| tf | 126 ns |
| Body diode | |
| trr | 137 ns |
| Qrr | 369 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN007N08T?
- iMN007N08T is a 80V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TOLLA-8L/TOLLB-8L package.
- What are the key ratings of iMN007N08T?
- iMN007N08T is rated 80V VDS and 500A at 25°C, with Rds(on) of 0.9 mΩ max at VGS = 10V and 1.5 mΩ max at 6V.
- Is iMN007N08T in production?
- iMN007N08T is in mass production. Samples are available from inergy.
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