Power MOSFET
iMN1R5N08G Mass production
80V N-channel MOSFET, 1.8 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 80V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 200A
- Drain current, ID @ 100°C
- 178A
- Rds(on) max @ VGS = 10V
- 1.8 mΩ
- Rds(on) max @ VGS = 4.5V
- 2.7 mΩ
- Gate threshold, VGS(th)
- 2.5V
- Total gate charge, Qg
- 143 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 80V, 200A at 25°C
- Rds(on) specified at 10V (1.8 mΩ max) and 4.5V (2.7 mΩ max) gate drive
- Qg 143 nC total gate charge (Qgd 35 nC)
- Junction temperature up to 175°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 80V |
| VGS | ±20V |
| ID @ 25°C | 200A |
| ID @ 100°C | 178A |
| PD | 250W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1.8 mΩ |
| Rds(on) @ VGS = 4.5V | 2.7 mΩ |
| VGS(th) | 2.5V |
| Capacitance | |
| Ciss | 6512 pF |
| Coss | 1112 pF |
| Crss | 136 pF |
| Gate charge | |
| Qg | 143 nC |
| Qgs | 26 nC |
| Qgd | 35 nC |
| Switching | |
| td(on) | 16 ns |
| tr | 67 ns |
| td(off) | 127 ns |
| tf | 88 ns |
| Body diode | |
| trr | 44 ns |
| Qrr | 41 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN1R5N08G?
- iMN1R5N08G is a 80V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iMN1R5N08G?
- iMN1R5N08G is rated 80V VDS and 200A at 25°C, with Rds(on) of 1.8 mΩ max at VGS = 10V and 2.7 mΩ max at 4.5V.
- Is iMN1R5N08G in production?
- iMN1R5N08G is in mass production. Samples are available from inergy.
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