Power MOSFET
iMF415 Mass production
80V N-channel MOSFET, 1.6 mΩ, LFPAK5x6-4L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 80V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 300A
- Drain current, ID @ 100°C
- 214A
- Rds(on) max @ VGS = 10V
- 1.6 mΩ
- Rds(on) max @ VGS = 4.5V
- 3.2 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 147 nC
- Package
- LFPAK5x6-4L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 80V, 300A at 25°C
- Rds(on) specified at 10V (1.6 mΩ max) and 4.5V (3.2 mΩ max) gate drive
- Qg 147 nC total gate charge (Qgd 41 nC)
- Junction temperature up to 175°C
- LFPAK5x6-4L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 80V |
| VGS | ±20V |
| ID @ 25°C | 300A |
| ID @ 100°C | 214A |
| PD | 300W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1.6 mΩ |
| Rds(on) @ VGS = 4.5V | 3.2 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 6964 pF |
| Coss | 1126 pF |
| Crss | 90 pF |
| Gate charge | |
| Qg | 147 nC |
| Qgs | 31 nC |
| Qgd | 41 nC |
| Switching | |
| td(on) | 18 ns |
| tr | 64 ns |
| td(off) | 110 ns |
| tf | 65 ns |
| Body diode | |
| trr | 70 ns |
| Qrr | 119 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMF415?
- iMF415 is a 80V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a LFPAK5x6-4L package.
- What are the key ratings of iMF415?
- iMF415 is rated 80V VDS and 300A at 25°C, with Rds(on) of 1.6 mΩ max at VGS = 10V and 3.2 mΩ max at 4.5V.
- Is iMF415 in production?
- iMF415 is in mass production. Samples are available from inergy.
Need iMF415 samples or design help?
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