Power MOSFET
iM1812 Mass production
30V P-channel MOSFET, 10.5 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -47A
- Drain current, ID @ 100°C
- -30A
- Rds(on) max @ VGS = 10V
- 10.5 mΩ
- Rds(on) max @ VGS = 4.5V
- 18.5 mΩ
- Gate threshold, VGS(th)
- -2.5V
- Total gate charge, Qg
- 62 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -47A at 25°C
- Rds(on) specified at 10V (10.5 mΩ max) and 4.5V (18.5 mΩ max) gate drive
- Qg 62 nC total gate charge (Qgd 9.5 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -47A |
| ID @ 100°C | -30A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 10.5 mΩ |
| Rds(on) @ VGS = 4.5V | 18.5 mΩ |
| VGS(th) | -2.5V |
| Capacitance | |
| Ciss | 3848 pF |
| Coss | 356 pF |
| Crss | 318 pF |
| Gate charge | |
| Qg | 62 nC |
| Qgs | 16 nC |
| Qgd | 9.5 nC |
| Switching | |
| td(on) | 56 ns |
| tr | 97 ns |
| td(off) | 383 ns |
| tf | 184 ns |
| Body diode | |
| trr | 27 ns |
| Qrr | 13 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1812?
- iM1812 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iM1812?
- iM1812 is rated 30V VDS and -47A at 25°C, with Rds(on) of 10.5 mΩ max at VGS = 10V and 18.5 mΩ max at 4.5V.
- Is iM1812 in production?
- iM1812 is in mass production. Samples are available from inergy.
Need iM1812 samples or design help?
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