Power MOSFET
iM1810 Mass production
30V P-channel MOSFET, 21 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -33A
- Drain current, ID @ 100°C
- -21A
- Rds(on) max @ VGS = 10V
- 21 mΩ
- Rds(on) max @ VGS = 4.5V
- 36 mΩ
- Gate threshold, VGS(th)
- -2.5V
- Total gate charge, Qg
- 31.6 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 30V, -33A at 25°C
- Rds(on) specified at 10V (21 mΩ max) and 4.5V (36 mΩ max) gate drive
- Qg 31.6 nC total gate charge (Qgd 4 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -30V |
| VGS | ±20V |
| ID @ 25°C | -33A |
| ID @ 100°C | -21A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 21 mΩ |
| Rds(on) @ VGS = 4.5V | 36 mΩ |
| VGS(th) | -2.5V |
| Capacitance | |
| Ciss | 1800 pF |
| Coss | 175 pF |
| Crss | 133 pF |
| Gate charge | |
| Qg | 31.6 nC |
| Qgs | 9 nC |
| Qgd | 4 nC |
| Switching | |
| td(on) | 20 ns |
| tr | 91 ns |
| td(off) | 230 ns |
| tf | 130 ns |
| Body diode | |
| trr | 15 ns |
| Qrr | 9 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1810?
- iM1810 is a 30V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iM1810?
- iM1810 is rated 30V VDS and -33A at 25°C, with Rds(on) of 21 mΩ max at VGS = 10V and 36 mΩ max at 4.5V.
- Is iM1810 in production?
- iM1810 is in mass production. Samples are available from inergy.
Need iM1810 samples or design help?
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