Power MOSFET
iMN005N04LFH Mass production
40V N-channel MOSFET, 0.66 mΩ, LFPAK5x6-4L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 40V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 325A
- Drain current, ID @ 100°C
- 325A
- Rds(on) max @ VGS = 10V
- 0.66 mΩ
- Rds(on) max @ VGS = 6V
- 1.85 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 121 nC
- Package
- LFPAK5x6-4L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 40V, 325A at 25°C
- Rds(on) specified at 10V (0.66 mΩ max) and 6V (1.85 mΩ max) gate drive
- Qg 121 nC total gate charge (Qgd 31 nC)
- Junction temperature up to 175°C
- LFPAK5x6-4L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 40V |
| VGS | ±20V |
| ID @ 25°C | 325A |
| ID @ 100°C | 325A |
| PD | 375W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 0.66 mΩ |
| Rds(on) @ VGS = 6V | 1.85 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 7204 pF |
| Coss | 2944 pF |
| Crss | 147 pF |
| Gate charge | |
| Qg | 121 nC |
| Qgs | 40 nC |
| Qgd | 31 nC |
| Switching | |
| td(on) | 26 ns |
| tr | 105 ns |
| td(off) | 81 ns |
| tf | 72 ns |
| Body diode | |
| trr | 76 ns |
| Qrr | 54 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN005N04LFH?
- iMN005N04LFH is a 40V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a LFPAK5x6-4L package.
- What are the key ratings of iMN005N04LFH?
- iMN005N04LFH is rated 40V VDS and 325A at 25°C, with Rds(on) of 0.66 mΩ max at VGS = 10V and 1.85 mΩ max at 6V.
- Is iMN005N04LFH in production?
- iMN005N04LFH is in mass production. Samples are available from inergy.
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