Power MOSFET
iMN008N04G Mass production
40V N-channel MOSFET, 0.65 mΩ, PDFN5X6B-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 40V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 200A
- Rds(on) max @ VGS = 10V
- 0.65 mΩ
- Rds(on) max @ VGS = 4.5V
- 1.08 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 168 nC
- Package
- PDFN5X6B-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 40V, 200A at 25°C
- Rds(on) specified at 10V (0.65 mΩ max) and 4.5V (1.08 mΩ max) gate drive
- Qg 168 nC total gate charge (Qgd 35 nC)
- Junction temperature up to 175°C
- PDFN5X6B-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 40V |
| VGS | ±20V |
| ID @ 25°C | 200A |
| PD | 250W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 0.65 mΩ |
| Rds(on) @ VGS = 4.5V | 1.08 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 8355 pF |
| Coss | 2819 pF |
| Crss | 117 pF |
| Gate charge | |
| Qg | 168 nC |
| Qgs | 28 nC |
| Qgd | 35 nC |
| Switching | |
| td(on) | 15 ns |
| tr | 74 ns |
| td(off) | 173 ns |
| tf | 125 ns |
| Body diode | |
| trr | 72 ns |
| Qrr | 84 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN008N04G?
- iMN008N04G is a 40V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6B-EP1-8L package.
- What are the key ratings of iMN008N04G?
- iMN008N04G is rated 40V VDS and 200A at 25°C, with Rds(on) of 0.65 mΩ max at VGS = 10V and 1.08 mΩ max at 4.5V.
- Is iMN008N04G in production?
- iMN008N04G is in mass production. Samples are available from inergy.
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