Power MOSFET
iMN009N04G Mass production
40V N-channel MOSFET, 1 mΩ, PDFN5X6B-EP1-8L/PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 40V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 297A
- Drain current, ID @ 100°C
- 210A
- Rds(on) max @ VGS = 10V
- 1 mΩ
- Rds(on) max @ VGS = 6V
- 3.1 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 80 nC
- Package
- PDFN5X6B-EP1-8L/PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 40V, 297A at 25°C
- Rds(on) specified at 10V (1 mΩ max) and 6V (3.1 mΩ max) gate drive
- Qg 80 nC total gate charge (Qgd 19 nC)
- Junction temperature up to 175°C
- PDFN5X6B-EP1-8L/PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 40V |
| VGS | ±20V |
| ID @ 25°C | 297A |
| ID @ 100°C | 210A |
| PD | 150W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1 mΩ |
| Rds(on) @ VGS = 6V | 3.1 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 4875 pF |
| Coss | 2047 pF |
| Crss | 175 pF |
| Gate charge | |
| Qg | 80 nC |
| Qgs | 27 nC |
| Qgd | 19 nC |
| Switching | |
| td(on) | 19 ns |
| tr | 79 ns |
| td(off) | 52 ns |
| tf | 44 ns |
| Body diode | |
| trr | 62.3 ns |
| Qrr | 66.6 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN009N04G?
- iMN009N04G is a 40V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6B-EP1-8L/PDFN5X6C-EP1-8L package.
- What are the key ratings of iMN009N04G?
- iMN009N04G is rated 40V VDS and 297A at 25°C, with Rds(on) of 1 mΩ max at VGS = 10V and 3.1 mΩ max at 6V.
- Is iMN009N04G in production?
- iMN009N04G is in mass production. Samples are available from inergy.
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