Power MOSFET
iM18111 Mass production
40V N-channel MOSFET, 2.5 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 40V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 111A
- Drain current, ID @ 100°C
- 70A
- Rds(on) max @ VGS = 10V
- 2.5 mΩ
- Rds(on) max @ VGS = 4.5V
- 5.4 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 54 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 40V, 111A at 25°C
- Rds(on) specified at 10V (2.5 mΩ max) and 4.5V (5.4 mΩ max) gate drive
- Qg 54 nC total gate charge (Qgd 14 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 40V |
| VGS | ±20V |
| ID @ 25°C | 111A |
| ID @ 100°C | 70A |
| PD | 50W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 2.5 mΩ |
| Rds(on) @ VGS = 4.5V | 5.4 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 2484 pF |
| Coss | 863 pF |
| Crss | 123 pF |
| Gate charge | |
| Qg | 54 nC |
| Qgs | 12 nC |
| Qgd | 14 nC |
| Switching | |
| td(on) | 10 ns |
| tr | 43 ns |
| td(off) | 41 ns |
| tf | 28 ns |
| Body diode | |
| trr | 36 ns |
| Qrr | 19 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM18111?
- iM18111 is a 40V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iM18111?
- iM18111 is rated 40V VDS and 111A at 25°C, with Rds(on) of 2.5 mΩ max at VGS = 10V and 5.4 mΩ max at 4.5V.
- Is iM18111 in production?
- iM18111 is in mass production. Samples are available from inergy.
Need iM18111 samples or design help?
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