Power MOSFET
iMF409 Mass production
30V N-channel MOSFET, 0.63 mΩ, LFPAK5x6-4L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 273A
- Drain current, ID @ 100°C
- 193A
- Rds(on) max @ VGS = 10V
- 0.63 mΩ
- Rds(on) max @ VGS = 4.5V
- 1.1 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 266 nC
- Package
- LFPAK5x6-4L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 30V, 273A at 25°C
- Rds(on) specified at 10V (0.63 mΩ max) and 4.5V (1.1 mΩ max) gate drive
- Qg 266 nC total gate charge (Qgd 40 nC)
- Junction temperature up to 175°C
- LFPAK5x6-4L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 273A |
| ID @ 100°C | 193A |
| PD | 96W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 0.63 mΩ |
| Rds(on) @ VGS = 4.5V | 1.1 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 14707 pF |
| Coss | 1417 pF |
| Crss | 603 pF |
| Gate charge | |
| Qg | 266 nC |
| Qgs | 55 nC |
| Qgd | 40 nC |
| Switching | |
| td(on) | 25 ns |
| tr | 177 ns |
| td(off) | 223 ns |
| tf | 105 ns |
| Body diode | |
| trr | 40 ns |
| Qrr | 27 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMF409?
- iMF409 is a 30V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a LFPAK5x6-4L package.
- What are the key ratings of iMF409?
- iMF409 is rated 30V VDS and 273A at 25°C, with Rds(on) of 0.63 mΩ max at VGS = 10V and 1.1 mΩ max at 4.5V.
- Is iMF409 in production?
- iMF409 is in mass production. Samples are available from inergy.
Need iMF409 samples or design help?
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