Power MOSFET
iM2323 Mass production
30V N-channel MOSFET, 20 mΩ, SOT23-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 5.6A
- Rds(on) max @ VGS = 10V
- 20 mΩ
- Rds(on) max @ VGS = 4.5V
- 31 mΩ
- Gate threshold, VGS(th)
- 2.5V
- Total gate charge, Qg
- 16 nC
- Package
- SOT23-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- N-channel MOSFET rated 30V, 5.6A at 25°C
- Rds(on) specified at 10V (20 mΩ max) and 4.5V (31 mΩ max) gate drive
- Qg 16 nC total gate charge (Qgd 2.2 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 5.6A |
| PD | 1W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 20 mΩ |
| Rds(on) @ VGS = 4.5V | 31 mΩ |
| VGS(th) | 2.5V |
| Capacitance | |
| Ciss | 862 pF |
| Coss | 80 pF |
| Crss | 68 pF |
| Gate charge | |
| Qg | 16 nC |
| Qgs | 4 nC |
| Qgd | 2.2 nC |
| Switching | |
| td(on) | 5 ns |
| tr | 16 ns |
| td(off) | 23 ns |
| tf | 14 ns |
| Body diode | |
| trr | 7 ns |
| Qrr | 3 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2323?
- iM2323 is a 30V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM2323?
- iM2323 is rated 30V VDS and 5.6A at 25°C, with Rds(on) of 20 mΩ max at VGS = 10V and 31 mΩ max at 4.5V.
- Is iM2323 in production?
- iM2323 is in mass production. Samples are available from inergy.
Need iM2323 samples or design help?
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