Power MOSFET
iM3099 Mass production
30V N-channel MOSFET, 408 mΩ, SOT23-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±12V
- Drain current, ID @ 25°C
- 1.1A
- Drain current, ID @ 100°C
- 0.7A
- Rds(on) max @ VGS = 10V
- 408 mΩ
- Rds(on) max @ VGS = 4.5V
- 518 mΩ
- Rds(on) max @ VGS = 2.5V
- 800 mΩ
- Gate threshold, VGS(th)
- 1.5V
- Total gate charge, Qg
- 1.72 nC
- Package
- SOT23-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- N-channel MOSFET rated 30V, 1.1A at 25°C
- Rds(on) specified at 10V (408 mΩ max) and 4.5V (518 mΩ max) gate drive
- Qg 1.72 nC total gate charge (Qgd 0.17 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±12V |
| ID @ 25°C | 1.1A |
| ID @ 100°C | 0.7A |
| PD | 0.83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 408 mΩ |
| Rds(on) @ VGS = 4.5V | 518 mΩ |
| Rds(on) @ VGS = 2.5V | 800 mΩ |
| VGS(th) | 1.5V |
| Capacitance | |
| Ciss | 61 pF |
| Coss | 14 pF |
| Crss | 7 pF |
| Gate charge | |
| Qg | 1.72 nC |
| Qgs | 0.35 nC |
| Qgd | 0.17 nC |
| Switching | |
| td(on) | 2.2 ns |
| tr | 17.8 ns |
| td(off) | 18.8 ns |
| tf | 21 ns |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM3099?
- iM3099 is a 30V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM3099?
- iM3099 is rated 30V VDS and 1.1A at 25°C, with Rds(on) of 408 mΩ max at VGS = 10V and 518 mΩ max at 4.5V.
- Is iM3099 in production?
- iM3099 is in mass production. Samples are available from inergy.
Need iM3099 samples or design help?
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