Power MOSFET
iM1885 Mass production
30V N-channel MOSFET, 3.1 mΩ, DFN3.3X3.3A-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 64A
- Drain current, ID @ 100°C
- 59A
- Rds(on) max @ VGS = 10V
- 3.1 mΩ
- Rds(on) max @ VGS = 4.5V
- 4.5 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 44 nC
- Package
- DFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 30V, 64A at 25°C
- Rds(on) specified at 10V (3.1 mΩ max) and 4.5V (4.5 mΩ max) gate drive
- Qg 44 nC total gate charge (Qgd 7.2 nC)
- Junction temperature up to 150°C
- DFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 64A |
| ID @ 100°C | 59A |
| PD | 41W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 3.1 mΩ |
| Rds(on) @ VGS = 4.5V | 4.5 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 2363 pF |
| Coss | 1237 pF |
| Crss | 117 pF |
| Gate charge | |
| Qg | 44 nC |
| Qgs | 8.8 nC |
| Qgd | 7.2 nC |
| Switching | |
| td(on) | 8.9 ns |
| tr | 52 ns |
| td(off) | 41 ns |
| tf | 26 ns |
| Body diode | |
| trr | 44 ns |
| Qrr | 39 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1885?
- iM1885 is a 30V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM1885?
- iM1885 is rated 30V VDS and 64A at 25°C, with Rds(on) of 3.1 mΩ max at VGS = 10V and 4.5 mΩ max at 4.5V.
- Is iM1885 in production?
- iM1885 is in mass production. Samples are available from inergy.
Need iM1885 samples or design help?
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