Power MOSFET
iMN03N10DM Mass production
100V N-channel MOSFET, 3.7 mΩ, TO263-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 90A
- Drain current, ID @ 100°C
- 90A
- Rds(on) max @ VGS = 10V
- 3.7 mΩ
- Rds(on) max @ VGS = 4.5V
- 5.7 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 96 nC
- Package
- TO263-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 100V, 90A at 25°C
- Rds(on) specified at 10V (3.7 mΩ max) and 4.5V (5.7 mΩ max) gate drive
- Qg 96 nC total gate charge (Qgd 23 nC)
- Junction temperature up to 175°C
- TO263-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 90A |
| ID @ 100°C | 90A |
| PD | 333W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 3.7 mΩ |
| Rds(on) @ VGS = 4.5V | 5.7 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 4748 pF |
| Coss | 788 pF |
| Crss | 46 pF |
| Gate charge | |
| Qg | 96 nC |
| Qgs | 17 nC |
| Qgd | 23 nC |
| Switching | |
| td(on) | 14 ns |
| tr | 47 ns |
| td(off) | 81 ns |
| tf | 102 ns |
| Body diode | |
| trr | 82 ns |
| Qrr | 154 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN03N10DM?
- iMN03N10DM is a 100V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO263-3L package.
- What are the key ratings of iMN03N10DM?
- iMN03N10DM is rated 100V VDS and 90A at 25°C, with Rds(on) of 3.7 mΩ max at VGS = 10V and 5.7 mΩ max at 4.5V.
- Is iMN03N10DM in production?
- iMN03N10DM is in mass production. Samples are available from inergy.
Need iMN03N10DM samples or design help?
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