Power MOSFET
iM18113 Mass production
100V N-channel MOSFET, 10 mΩ, DFN3.3X3.3A-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 51A
- Drain current, ID @ 100°C
- 32A
- Rds(on) max @ VGS = 10V
- 10 mΩ
- Rds(on) max @ VGS = 4.5V
- 14 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 43 nC
- Package
- DFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 100V, 51A at 25°C
- Rds(on) specified at 10V (10 mΩ max) and 4.5V (14 mΩ max) gate drive
- Qg 43 nC total gate charge (Qgd 11 nC)
- Junction temperature up to 150°C
- DFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 51A |
| ID @ 100°C | 32A |
| PD | 50W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 10 mΩ |
| Rds(on) @ VGS = 4.5V | 14 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 1919 pF |
| Coss | 326 pF |
| Crss | 14 pF |
| Gate charge | |
| Qg | 43 nC |
| Qgs | 9.1 nC |
| Qgd | 11 nC |
| Switching | |
| td(on) | 9.1 ns |
| tr | 21 ns |
| td(off) | 32 ns |
| tf | 19 ns |
| Body diode | |
| trr | 54 ns |
| Qrr | 58 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM18113?
- iM18113 is a 100V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM18113?
- iM18113 is rated 100V VDS and 51A at 25°C, with Rds(on) of 10 mΩ max at VGS = 10V and 14 mΩ max at 4.5V.
- Is iM18113 in production?
- iM18113 is in mass production. Samples are available from inergy.
Need iM18113 samples or design help?
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