Power MOSFET
iM6323 Mass production
100V N-channel MOSFET, 2.2 mΩ, TO263-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 150A
- Drain current, ID @ 100°C
- 150A
- Rds(on) max @ VGS = 10V
- 2.2 mΩ
- Rds(on) max @ VGS = 6V
- 3.1 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 182 nC
- Package
- TO263-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 100V, 150A at 25°C
- Rds(on) specified at 10V (2.2 mΩ max) and 6V (3.1 mΩ max) gate drive
- Qg 182 nC total gate charge (Qgd 55 nC)
- Junction temperature up to 175°C
- TO263-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 150A |
| ID @ 100°C | 150A |
| PD | 500W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 2.2 mΩ |
| Rds(on) @ VGS = 6V | 3.1 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 10001 pF |
| Coss | 1667 pF |
| Crss | 48 pF |
| Gate charge | |
| Qg | 182 nC |
| Qgs | 53 nC |
| Qgd | 55 nC |
| Switching | |
| td(on) | 34 ns |
| tr | 117 ns |
| td(off) | 117 ns |
| tf | 139 ns |
| Body diode | |
| trr | 97 ns |
| Qrr | 309 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM6323?
- iM6323 is a 100V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO263-3L package.
- What are the key ratings of iM6323?
- iM6323 is rated 100V VDS and 150A at 25°C, with Rds(on) of 2.2 mΩ max at VGS = 10V and 3.1 mΩ max at 6V.
- Is iM6323 in production?
- iM6323 is in mass production. Samples are available from inergy.
Need iM6323 samples or design help?
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