Power MOSFET
iMN004N03LF Mass production
30V N-channel MOSFET, 0.42 mΩ, LFPAK5x6-4L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 300A
- Drain current, ID @ 100°C
- 300A
- Rds(on) max @ VGS = 10V
- 0.42 mΩ
- Rds(on) max @ VGS = 4.5V
- 0.78 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 141 nC
- Package
- LFPAK5x6-4L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 30V, 300A at 25°C
- Rds(on) specified at 10V (0.42 mΩ max) and 4.5V (0.78 mΩ max) gate drive
- Qg 141 nC total gate charge (Qgd 20 nC)
- Junction temperature up to 175°C
- LFPAK5x6-4L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 300A |
| ID @ 100°C | 300A |
| PD | 375W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 0.42 mΩ |
| Rds(on) @ VGS = 4.5V | 0.78 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 8366 pF |
| Coss | 4056 pF |
| Crss | 118 pF |
| Gate charge | |
| Qg | 141 nC |
| Qgs | 26 nC |
| Qgd | 20 nC |
| Switching | |
| td(on) | 13 ns |
| tr | 141 ns |
| td(off) | 164 ns |
| tf | 107 ns |
| Body diode | |
| trr | 53 ns |
| Qrr | 48 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN004N03LF?
- iMN004N03LF is a 30V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a LFPAK5x6-4L package.
- What are the key ratings of iMN004N03LF?
- iMN004N03LF is rated 30V VDS and 300A at 25°C, with Rds(on) of 0.42 mΩ max at VGS = 10V and 0.78 mΩ max at 4.5V.
- Is iMN004N03LF in production?
- iMN004N03LF is in mass production. Samples are available from inergy.
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