Power MOSFET
iM6307 Mass production
100V N-channel MOSFET, 1.8 mΩ, TO263-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 120A
- Drain current, ID @ 100°C
- 120A
- Rds(on) max @ VGS = 10V
- 1.8 mΩ
- Rds(on) max @ VGS = 4.5V
- 2.7 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 239 nC
- Package
- TO263-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 100V, 120A at 25°C
- Rds(on) specified at 10V (1.8 mΩ max) and 4.5V (2.7 mΩ max) gate drive
- Qg 239 nC total gate charge (Qgd 56 nC)
- Junction temperature up to 150°C
- TO263-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 120A |
| ID @ 100°C | 120A |
| PD | 417W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1.8 mΩ |
| Rds(on) @ VGS = 4.5V | 2.7 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 11921 pF |
| Coss | 2091 pF |
| Crss | 101 pF |
| Gate charge | |
| Qg | 239 nC |
| Qgs | 46 nC |
| Qgd | 56 nC |
| Switching | |
| td(on) | 24 ns |
| tr | 123 ns |
| td(off) | 185 ns |
| tf | 168 ns |
| Body diode | |
| trr | 128 ns |
| Qrr | 324 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM6307?
- iM6307 is a 100V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO263-3L package.
- What are the key ratings of iM6307?
- iM6307 is rated 100V VDS and 120A at 25°C, with Rds(on) of 1.8 mΩ max at VGS = 10V and 2.7 mΩ max at 4.5V.
- Is iM6307 in production?
- iM6307 is in mass production. Samples are available from inergy.
Need iM6307 samples or design help?
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