Power MOSFET
iM5231 Mass production
30V N-channel MOSFET, 6 mΩ, TO252A-3L/TO252B-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 30V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 48A
- Drain current, ID @ 100°C
- 46A
- Rds(on) max @ VGS = 10V
- 6 mΩ
- Rds(on) max @ VGS = 4.5V
- 9 mΩ
- Gate threshold, VGS(th)
- 2V
- Total gate charge, Qg
- 43 nC
- Package
- TO252A-3L/TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 30V, 48A at 25°C
- Rds(on) specified at 10V (6 mΩ max) and 4.5V (9 mΩ max) gate drive
- Qg 43 nC total gate charge (Qgd 6.2 nC)
- Junction temperature up to 150°C
- TO252A-3L/TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 30V |
| VGS | ±20V |
| ID @ 25°C | 48A |
| ID @ 100°C | 46A |
| PD | 50W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 6 mΩ |
| Rds(on) @ VGS = 4.5V | 9 mΩ |
| VGS(th) | 2V |
| Capacitance | |
| Ciss | 2300 pF |
| Coss | 251 pF |
| Crss | 221 pF |
| Gate charge | |
| Qg | 43 nC |
| Qgs | 9.7 nC |
| Qgd | 6.2 nC |
| Switching | |
| td(on) | 9.5 ns |
| tr | 73 ns |
| td(off) | 36 ns |
| tf | 65 ns |
| Body diode | |
| trr | 12 ns |
| Qrr | 4.9 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5231?
- iM5231 is a 30V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L/TO252B-3L package.
- What are the key ratings of iM5231?
- iM5231 is rated 30V VDS and 48A at 25°C, with Rds(on) of 6 mΩ max at VGS = 10V and 9 mΩ max at 4.5V.
- Is iM5231 in production?
- iM5231 is in mass production. Samples are available from inergy.
Need iM5231 samples or design help?
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