Power MOSFET
iM5223 Mass production
100V N-channel MOSFET, 140 mΩ, TO252A-3L/TO252B-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 11A
- Drain current, ID @ 100°C
- 6.9A
- Rds(on) max @ VGS = 10V
- 140 mΩ
- Rds(on) max @ VGS = 4.5V
- 150 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 19 nC
- Package
- TO252A-3L/TO252B-3L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 100V, 11A at 25°C
- Rds(on) specified at 10V (140 mΩ max) and 4.5V (150 mΩ max) gate drive
- Qg 19 nC total gate charge (Qgd 2.1 nC)
- Junction temperature up to 150°C
- TO252A-3L/TO252B-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 11A |
| ID @ 100°C | 6.9A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 140 mΩ |
| Rds(on) @ VGS = 4.5V | 150 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 1095 pF |
| Coss | 26 pF |
| Crss | 25 pF |
| Gate charge | |
| Qg | 19 nC |
| Qgs | 4.3 nC |
| Qgd | 2.1 nC |
| Switching | |
| td(on) | 6.8 ns |
| tr | 2.6 ns |
| td(off) | 19 ns |
| tf | 7.4 ns |
| Body diode | |
| trr | 20 ns |
| Qrr | 19 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5223?
- iM5223 is a 100V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L/TO252B-3L package.
- What are the key ratings of iM5223?
- iM5223 is rated 100V VDS and 11A at 25°C, with Rds(on) of 140 mΩ max at VGS = 10V and 150 mΩ max at 4.5V.
- Is iM5223 in production?
- iM5223 is in mass production. Samples are available from inergy.
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