Power MOSFET
iM5214 Mass production
60V P-channel MOSFET, 23 mΩ, TO252A-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -38A
- Drain current, ID @ 100°C
- -24A
- Rds(on) max @ VGS = 10V
- 23 mΩ
- Rds(on) max @ VGS = 4.5V
- 33 mΩ
- Gate threshold, VGS(th)
- -3V
- Total gate charge, Qg
- 72.3 nC
- Package
- TO252A-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 60V, -38A at 25°C
- Rds(on) specified at 10V (23 mΩ max) and 4.5V (33 mΩ max) gate drive
- Qg 72.3 nC total gate charge (Qgd 9.9 nC)
- Junction temperature up to 150°C
- TO252A-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -60V |
| VGS | ±20V |
| ID @ 25°C | -38A |
| ID @ 100°C | -24A |
| PD | 50W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 23 mΩ |
| Rds(on) @ VGS = 4.5V | 33 mΩ |
| VGS(th) | -3V |
| Capacitance | |
| Ciss | 4548 pF |
| Coss | 177 pF |
| Crss | 119 pF |
| Gate charge | |
| Qg | 72.3 nC |
| Qgs | 19.6 nC |
| Qgd | 9.9 nC |
| Switching | |
| td(on) | 67 ns |
| tr | 100.5 ns |
| td(off) | 460 ns |
| tf | 200.4 ns |
| Body diode | |
| trr | 24.5 ns |
| Qrr | 26.8 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM5214?
- iM5214 is a 60V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a TO252A-3L package.
- What are the key ratings of iM5214?
- iM5214 is rated 60V VDS and -38A at 25°C, with Rds(on) of 23 mΩ max at VGS = 10V and 33 mΩ max at 4.5V.
- Is iM5214 in production?
- iM5214 is in mass production. Samples are available from inergy.
Need iM5214 samples or design help?
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