Power MOSFET
iM1806 Mass production
60V P-channel MOSFET, 28 mΩ, DFN3.3X3.3A-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -31A
- Rds(on) max @ VGS = 10V
- 28 mΩ
- Rds(on) max @ VGS = 4.5V
- 35 mΩ
- Gate threshold, VGS(th)
- -3V
- Total gate charge, Qg
- 61 nC
- Package
- DFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 60V, -31A at 25°C
- Rds(on) specified at 10V (28 mΩ max) and 4.5V (35 mΩ max) gate drive
- Qg 61 nC total gate charge (Qgd 7.6 nC)
- Junction temperature up to 150°C
- DFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -60V |
| VGS | ±20V |
| ID @ 25°C | -31A |
| PD | 41W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 28 mΩ |
| Rds(on) @ VGS = 4.5V | 35 mΩ |
| VGS(th) | -3V |
| Capacitance | |
| Ciss | 3431 pF |
| Coss | 213 pF |
| Crss | 172 pF |
| Gate charge | |
| Qg | 61 nC |
| Qgs | 14 nC |
| Qgd | 7.6 nC |
| Switching | |
| td(on) | 36 ns |
| tr | 54 ns |
| td(off) | 421 ns |
| tf | 150 ns |
| Body diode | |
| trr | 22 ns |
| Qrr | 24 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1806?
- iM1806 is a 60V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM1806?
- iM1806 is rated 60V VDS and -31A at 25°C, with Rds(on) of 28 mΩ max at VGS = 10V and 35 mΩ max at 4.5V.
- Is iM1806 in production?
- iM1806 is in mass production. Samples are available from inergy.
Need iM1806 samples or design help?
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