Power MOSFET
iM2313 Mass production
60V P-channel MOSFET, 3300 mΩ, SOT23S-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 60V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- -0.35A
- Drain current, ID @ 100°C
- -0.22A
- Rds(on) max @ VGS = 10V
- 3300 mΩ
- Rds(on) max @ VGS = 4.5V
- 4000 mΩ
- Gate threshold, VGS(th)
- -2V
- Total gate charge, Qg
- 1.6 nC
- Package
- SOT23S-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- P-channel MOSFET rated 60V, -0.35A at 25°C
- Rds(on) specified at 10V (3300 mΩ max) and 4.5V (4000 mΩ max) gate drive
- Qg 1.6 nC total gate charge (Qgd 0.2 nC)
- Junction temperature up to 150°C
- SOT23S-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -60V |
| VGS | ±20V |
| ID @ 25°C | -0.35A |
| ID @ 100°C | -0.22A |
| PD | 0.78W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 3300 mΩ |
| Rds(on) @ VGS = 4.5V | 4000 mΩ |
| VGS(th) | -2V |
| Capacitance | |
| Ciss | 31 pF |
| Coss | 3 pF |
| Crss | 1.7 pF |
| Gate charge | |
| Qg | 1.6 nC |
| Qgs | 0.5 nC |
| Qgd | 0.2 nC |
| Switching | |
| td(on) | 6.7 ns |
| tr | 7.3 ns |
| td(off) | 35 ns |
| tf | 23 ns |
| Body diode | |
| trr | 21 ns |
| Qrr | 13 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2313?
- iM2313 is a 60V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23S-3L package.
- What are the key ratings of iM2313?
- iM2313 is rated 60V VDS and -0.35A at 25°C, with Rds(on) of 3300 mΩ max at VGS = 10V and 4000 mΩ max at 4.5V.
- Is iM2313 in production?
- iM2313 is in mass production. Samples are available from inergy.
Need iM2313 samples or design help?
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