Power MOSFET
iM3415D Mass production
20V P-channel MOSFET, , SOT23-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 20V
- Gate-source voltage, VGS
- ±8V
- Drain current, ID @ 25°C
- -3.5A
- Rds(on) max @ VGS = 4.5V
- 43 mΩ
- Rds(on) max @ VGS = 2.5V
- 60 mΩ
- Rds(on) max @ VGS = 1.8V
- 80 mΩ
- Gate threshold, VGS(th)
- -1V
- Total gate charge, Qg
- 10 nC
- Package
- SOT23-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- P-channel MOSFET rated 20V, -3.5A at 25°C
- Rds(on) specified at 10V ( max) and 4.5V (43 mΩ max) gate drive
- Qg 10 nC total gate charge (Qgd 2.2 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -20V |
| VGS | ±8V |
| ID @ 25°C | -3.5A |
| PD | 0.83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 4.5V | 43 mΩ |
| Rds(on) @ VGS = 2.5V | 60 mΩ |
| Rds(on) @ VGS = 1.8V | 80 mΩ |
| VGS(th) | -1V |
| Capacitance | |
| Ciss | 902 pF |
| Coss | 120 pF |
| Crss | 113 pF |
| Gate charge | |
| Qg | 10 nC |
| Qgs | 2.5 nC |
| Qgd | 2.2 nC |
| Switching | |
| td(on) | 4.9 ns |
| tr | 25 ns |
| td(off) | 39 ns |
| tf | 28 ns |
| Body diode | |
| trr | 10 ns |
| Qrr | 3.7 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM3415D?
- iM3415D is a 20V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM3415D?
- iM3415D is rated 20V VDS and -3.5A at 25°C, with Rds(on) of max at VGS = 10V and 43 mΩ max at 4.5V.
- Is iM3415D in production?
- iM3415D is in mass production. Samples are available from inergy.
Need iM3415D samples or design help?
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