Power MOSFET
iM2132A Mass production
20V P-channel MOSFET, , SOT23-3L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 20V
- Gate-source voltage, VGS
- ±12V
- Drain current, ID @ 25°C
- -4.3A
- Rds(on) max @ VGS = 4.5V
- 30 mΩ
- Rds(on) max @ VGS = 2.5V
- 42 mΩ
- Rds(on) max @ VGS = 1.8V
- 68 mΩ
- Gate threshold, VGS(th)
- -1V
- Total gate charge, Qg
- 15 nC
- Package
- SOT23-3L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 20V, -4.3A at 25°C
- Rds(on) specified at 10V ( max) and 4.5V (30 mΩ max) gate drive
- Qg 15 nC total gate charge (Qgd 3.5 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -20V |
| VGS | ±12V |
| ID @ 25°C | -4.3A |
| PD | 0.83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 4.5V | 30 mΩ |
| Rds(on) @ VGS = 2.5V | 42 mΩ |
| Rds(on) @ VGS = 1.8V | 68 mΩ |
| VGS(th) | -1V |
| Capacitance | |
| Ciss | 1380 pF |
| Coss | 200 pF |
| Crss | 180 pF |
| Gate charge | |
| Qg | 15 nC |
| Qgs | 3.3 nC |
| Qgd | 3.5 nC |
| Switching | |
| td(on) | 18 ns |
| tr | 57 ns |
| td(off) | 249 ns |
| tf | 151 ns |
| Body diode | |
| trr | 17 ns |
| Qrr | 5.7 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2132A?
- iM2132A is a 20V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM2132A?
- iM2132A is rated 20V VDS and -4.3A at 25°C, with Rds(on) of max at VGS = 10V and 30 mΩ max at 4.5V.
- Is iM2132A in production?
- iM2132A is in mass production. Samples are available from inergy.
Need iM2132A samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.