Power MOSFET
iM1891 Mass production
20V P-channel MOSFET, 6.6 mΩ, DFN3.3X3.3A-EP1-8L
Key specifications
- Type
- P-channel MOSFET
- Drain-source voltage, VDS
- 20V
- Gate-source voltage, VGS
- ±12V
- Drain current, ID @ 25°C
- -54A
- Rds(on) max @ VGS = 10V
- 6.6 mΩ
- Rds(on) max @ VGS = 4.5V
- 9.5 mΩ
- Gate threshold, VGS(th)
- -1V
- Total gate charge, Qg
- 82 nC
- Package
- DFN3.3X3.3A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- P-channel MOSFET rated 20V, -54A at 25°C
- Rds(on) specified at 10V (6.6 mΩ max) and 4.5V (9.5 mΩ max) gate drive
- Qg 82 nC total gate charge (Qgd 20 nC)
- Junction temperature up to 150°C
- DFN3.3X3.3A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | -20V |
| VGS | ±12V |
| ID @ 25°C | -54A |
| PD | 41W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 6.6 mΩ |
| Rds(on) @ VGS = 4.5V | 9.5 mΩ |
| VGS(th) | -1V |
| Capacitance | |
| Ciss | 8537 pF |
| Coss | 1037 pF |
| Crss | 713 pF |
| Gate charge | |
| Qg | 82 nC |
| Qgs | 21 nC |
| Qgd | 20 nC |
| Switching | |
| td(on) | 23 ns |
| tr | 98 ns |
| td(off) | 652 ns |
| tf | 129 ns |
| Body diode | |
| trr | 97 ns |
| Qrr | 100 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1891?
- iM1891 is a 20V P-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a DFN3.3X3.3A-EP1-8L package.
- What are the key ratings of iM1891?
- iM1891 is rated 20V VDS and -54A at 25°C, with Rds(on) of 6.6 mΩ max at VGS = 10V and 9.5 mΩ max at 4.5V.
- Is iM1891 in production?
- iM1891 is in mass production. Samples are available from inergy.
Need iM1891 samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.