Power MOSFET
iM2319 Mass production
20V N-channel MOSFET, , SOT23-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 20V
- Gate-source voltage, VGS
- ±12V
- Drain current, ID @ 25°C
- 6.8A
- Drain current, ID @ 100°C
- 4.3A
- Rds(on) max @ VGS = 4.5V
- 20 mΩ
- Rds(on) max @ VGS = 2.5V
- 27 mΩ
- Gate threshold, VGS(th)
- 1.1V
- Total gate charge, Qg
- 30 nC
- Package
- SOT23-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- N-channel MOSFET rated 20V, 6.8A at 25°C
- Rds(on) specified at 10V ( max) and 4.5V (20 mΩ max) gate drive
- Qg 30 nC total gate charge (Qgd 1.7 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 20V |
| VGS | ±12V |
| ID @ 25°C | 6.8A |
| ID @ 100°C | 4.3A |
| PD | 1.4W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 4.5V | 20 mΩ |
| Rds(on) @ VGS = 2.5V | 27 mΩ |
| VGS(th) | 1.1V |
| Capacitance | |
| Ciss | 1074 pF |
| Coss | 120 pF |
| Crss | 108 pF |
| Gate charge | |
| Qg | 30 nC |
| Qgs | 4 nC |
| Qgd | 1.7 nC |
| Switching | |
| td(on) | 6 ns |
| tr | 6.1 ns |
| td(off) | 35 ns |
| tf | 30 ns |
| Body diode | |
| trr | 10.3 ns |
| Qrr | 0.16 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2319?
- iM2319 is a 20V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM2319?
- iM2319 is rated 20V VDS and 6.8A at 25°C, with Rds(on) of max at VGS = 10V and 20 mΩ max at 4.5V.
- Is iM2319 in production?
- iM2319 is in mass production. Samples are available from inergy.
Need iM2319 samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.