Power MOSFET
iM1819 Mass production
20V N-channel MOSFET, 1.5 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 20V
- Gate-source voltage, VGS
- ±10V
- Drain current, ID @ 25°C
- 124A
- Rds(on) max @ VGS = 10V
- 1.5 mΩ
- Rds(on) max @ VGS = 4.5V
- 1.7 mΩ
- Rds(on) max @ VGS = 2.5V
- 2.5 mΩ
- Gate threshold, VGS(th)
- 1V
- Total gate charge, Qg
- 270 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 20V, 124A at 25°C
- Rds(on) specified at 10V (1.5 mΩ max) and 4.5V (1.7 mΩ max) gate drive
- Qg 270 nC total gate charge (Qgd 38 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 20V |
| VGS | ±10V |
| ID @ 25°C | 124A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 1.5 mΩ |
| Rds(on) @ VGS = 4.5V | 1.7 mΩ |
| Rds(on) @ VGS = 2.5V | 2.5 mΩ |
| VGS(th) | 1V |
| Capacitance | |
| Ciss | 9681 pF |
| Coss | 1463 pF |
| Crss | 931 pF |
| Gate charge | |
| Qg | 270 nC |
| Qgs | 23 nC |
| Qgd | 38 nC |
| Switching | |
| td(on) | 14.5 ns |
| tr | 70 ns |
| td(off) | 285 ns |
| tf | 130 ns |
| Body diode | |
| trr | 84 ns |
| Qrr | 139 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1819?
- iM1819 is a 20V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iM1819?
- iM1819 is rated 20V VDS and 124A at 25°C, with Rds(on) of 1.5 mΩ max at VGS = 10V and 1.7 mΩ max at 4.5V.
- Is iM1819 in production?
- iM1819 is in mass production. Samples are available from inergy.
Need iM1819 samples or design help?
Tell us the application, bus voltage and power. We will reply with a part list, the closest reference design and sample availability.