Power MOSFET
iM2311 Mass production
20V N-channel MOSFET, , SOT23-3L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 20V
- Gate-source voltage, VGS
- ±10V
- Drain current, ID @ 25°C
- 4.5A
- Drain current, ID @ 100°C
- 2.8A
- Rds(on) max @ VGS = 4.5V
- 27 mΩ
- Rds(on) max @ VGS = 2.5V
- 35 mΩ
- Rds(on) max @ VGS = 1.8V
- 54 mΩ
- Gate threshold, VGS(th)
- 1V
- Total gate charge, Qg
- 6.3 nC
- Package
- SOT23-3L
- ESD protection
- Yes
- Status
- Mass production
Features
- N-channel MOSFET rated 20V, 4.5A at 25°C
- Rds(on) specified at 10V ( max) and 4.5V (27 mΩ max) gate drive
- Qg 6.3 nC total gate charge (Qgd 1.6 nC)
- Junction temperature up to 150°C
- SOT23-3L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 20V |
| VGS | ±10V |
| ID @ 25°C | 4.5A |
| ID @ 100°C | 2.8A |
| PD | 0.83W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 4.5V | 27 mΩ |
| Rds(on) @ VGS = 2.5V | 35 mΩ |
| Rds(on) @ VGS = 1.8V | 54 mΩ |
| VGS(th) | 1V |
| Capacitance | |
| Ciss | 466 pF |
| Coss | 68 pF |
| Crss | 63 pF |
| Gate charge | |
| Qg | 6.3 nC |
| Qgs | 1.3 nC |
| Qgd | 1.6 nC |
| Switching | |
| td(on) | 3.9 ns |
| tr | 26 ns |
| td(off) | 29 ns |
| tf | 26 ns |
| Body diode | |
| trr | 11 ns |
| Qrr | 3.8 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM2311?
- iM2311 is a 20V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a SOT23-3L package.
- What are the key ratings of iM2311?
- iM2311 is rated 20V VDS and 4.5A at 25°C, with Rds(on) of max at VGS = 10V and 27 mΩ max at 4.5V.
- Is iM2311 in production?
- iM2311 is in mass production. Samples are available from inergy.
Need iM2311 samples or design help?
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