Power MOSFET
iM18105 Mass production
100V N-channel MOSFET, 7.8 mΩ, PDFN5X6A-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 78A
- Drain current, ID @ 100°C
- 49A
- Rds(on) max @ VGS = 10V
- 7.8 mΩ
- Rds(on) max @ VGS = 4.5V
- 12.3 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 63 nC
- Package
- PDFN5X6A-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 100V, 78A at 25°C
- Rds(on) specified at 10V (7.8 mΩ max) and 4.5V (12.3 mΩ max) gate drive
- Qg 63 nC total gate charge (Qgd 18 nC)
- Junction temperature up to 150°C
- PDFN5X6A-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 78A |
| ID @ 100°C | 49A |
| PD | 96W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 7.8 mΩ |
| Rds(on) @ VGS = 4.5V | 12.3 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 2738 pF |
| Coss | 397 pF |
| Crss | 30 pF |
| Gate charge | |
| Qg | 63 nC |
| Qgs | 13 nC |
| Qgd | 18 nC |
| Switching | |
| td(on) | 12 ns |
| tr | 22 ns |
| td(off) | 46 ns |
| tf | 25 ns |
| Body diode | |
| trr | 55 ns |
| Qrr | 66 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM18105?
- iM18105 is a 100V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6A-EP1-8L package.
- What are the key ratings of iM18105?
- iM18105 is rated 100V VDS and 78A at 25°C, with Rds(on) of 7.8 mΩ max at VGS = 10V and 12.3 mΩ max at 4.5V.
- Is iM18105 in production?
- iM18105 is in mass production. Samples are available from inergy.
Need iM18105 samples or design help?
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