Power MOSFET
iM1639 Mass production
100V Dual N MOSFET, 80 mΩ, PDFN5X6C-EP2-8L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 9.4A
- Drain current, ID @ 100°C
- 5.9A
- Rds(on) max @ VGS = 10V
- 80 mΩ
- Rds(on) max @ VGS = 4.5V
- 90 mΩ
- Gate threshold, VGS(th)
- 2.5V
- Total gate charge, Qg
- 29 nC
- Package
- PDFN5X6C-EP2-8L
- ESD protection
- No
- Status
- Mass production
Features
- Dual N MOSFET rated 100V, 9.4A at 25°C
- Rds(on) specified at 10V (80 mΩ max) and 4.5V (90 mΩ max) gate drive
- Qg 29 nC total gate charge (Qgd 3.2 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP2-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 9.4A |
| ID @ 100°C | 5.9A |
| PD | 17W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 80 mΩ |
| Rds(on) @ VGS = 4.5V | 90 mΩ |
| VGS(th) | 2.5V |
| Capacitance | |
| Ciss | 1618 pF |
| Coss | 34 pF |
| Crss | 23 pF |
| Gate charge | |
| Qg | 29 nC |
| Qgs | 6.9 nC |
| Qgd | 3.2 nC |
| Switching | |
| td(on) | 6.5 ns |
| tr | 2.9 ns |
| td(off) | 32 ns |
| tf | 9.1 ns |
| Body diode | |
| trr | 21 ns |
| Qrr | 23 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1639?
- iM1639 is a 100V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP2-8L package.
- What are the key ratings of iM1639?
- iM1639 is rated 100V VDS and 9.4A at 25°C, with Rds(on) of 80 mΩ max at VGS = 10V and 90 mΩ max at 4.5V.
- Is iM1639 in production?
- iM1639 is in mass production. Samples are available from inergy.
Need iM1639 samples or design help?
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