Power MOSFET
iM1629 Mass production
100V Dual N MOSFET, 18 mΩ, PDFN5x6A-EP2-8L/PDFN5x6C-EP2-8L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 31A
- Drain current, ID @ 100°C
- 19.8A
- Rds(on) max @ VGS = 10V
- 18 mΩ
- Rds(on) max @ VGS = 4.5V
- 28 mΩ
- Gate threshold, VGS(th)
- 3V
- Total gate charge, Qg
- 24 nC
- Package
- PDFN5x6A-EP2-8L/PDFN5x6C-EP2-8L
- ESD protection
- No
- Status
- Mass production
Features
- Dual N MOSFET rated 100V, 31A at 25°C
- Rds(on) specified at 10V (18 mΩ max) and 4.5V (28 mΩ max) gate drive
- Qg 24 nC total gate charge (Qgd 6 nC)
- Junction temperature up to 150°C
- PDFN5x6A-EP2-8L/PDFN5x6C-EP2-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 31A |
| ID @ 100°C | 19.8A |
| PD | 35W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 18 mΩ |
| Rds(on) @ VGS = 4.5V | 28 mΩ |
| VGS(th) | 3V |
| Capacitance | |
| Ciss | 1065 pF |
| Coss | 177 pF |
| Crss | 23 pF |
| Gate charge | |
| Qg | 24 nC |
| Qgs | 5 nC |
| Qgd | 6 nC |
| Switching | |
| td(on) | 7 ns |
| tr | 26 ns |
| td(off) | 19 ns |
| tf | 21 ns |
| Body diode | |
| trr | 51 ns |
| Qrr | 52 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1629?
- iM1629 is a 100V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5x6A-EP2-8L/PDFN5x6C-EP2-8L package.
- What are the key ratings of iM1629?
- iM1629 is rated 100V VDS and 31A at 25°C, with Rds(on) of 18 mΩ max at VGS = 10V and 28 mΩ max at 4.5V.
- Is iM1629 in production?
- iM1629 is in mass production. Samples are available from inergy.
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