Power MOSFET
iM1629B Mass production
100V Dual N MOSFET, 19 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- Dual N MOSFET
- Drain-source voltage, VDS
- 100V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 30A
- Drain current, ID @ 100°C
- 19A
- Rds(on) max @ VGS = 10V
- 19 mΩ
- Rds(on) max @ VGS = 6V
- 27 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 22 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- Dual N MOSFET rated 100V, 30A at 25°C
- Rds(on) specified at 10V (19 mΩ max) and 6V (27 mΩ max) gate drive
- Qg 22 nC total gate charge (Qgd 5.8 nC)
- Junction temperature up to 150°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 100V |
| VGS | ±20V |
| ID @ 25°C | 30A |
| ID @ 100°C | 19A |
| PD | 31W |
| Tj max | 150°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 19 mΩ |
| Rds(on) @ VGS = 6V | 27 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 1148 pF |
| Coss | 176 pF |
| Crss | 6 pF |
| Gate charge | |
| Qg | 22 nC |
| Qgs | 7.3 nC |
| Qgd | 5.8 nC |
| Switching | |
| td(on) | 8 ns |
| tr | 16 ns |
| td(off) | 15 ns |
| tf | 5 ns |
| Body diode | |
| trr | 37 ns |
| Qrr | 40 nC |
Dual parts list channel 1 / channel 2. Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iM1629B?
- iM1629B is a 100V Dual N power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iM1629B?
- iM1629B is rated 100V VDS and 30A at 25°C, with Rds(on) of 19 mΩ max at VGS = 10V and 27 mΩ max at 6V.
- Is iM1629B in production?
- iM1629B is in mass production. Samples are available from inergy.
Need iM1629B samples or design help?
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