Power MOSFET
iMN220N20G Mass production
200V N-channel MOSFET, 19 mΩ, PDFN5X6C-EP1-8L
Key specifications
- Type
- N-channel MOSFET
- Drain-source voltage, VDS
- 200V
- Gate-source voltage, VGS
- ±20V
- Drain current, ID @ 25°C
- 35A
- Drain current, ID @ 100°C
- 24A
- Rds(on) max @ VGS = 10V
- 19 mΩ
- Rds(on) max @ VGS = 6V
- 23 mΩ
- Gate threshold, VGS(th)
- 4V
- Total gate charge, Qg
- 64 nC
- Package
- PDFN5X6C-EP1-8L
- ESD protection
- No
- Status
- Mass production
Features
- N-channel MOSFET rated 200V, 35A at 25°C
- Rds(on) specified at 10V (19 mΩ max) and 6V (23 mΩ max) gate drive
- Qg 64 nC total gate charge (Qgd 14 nC)
- Junction temperature up to 175°C
- PDFN5X6C-EP1-8L package
Electrical characteristics
| Parameter | Value |
|---|---|
| Ratings | |
| VDS | 200V |
| VGS | ±20V |
| ID @ 25°C | 35A |
| ID @ 100°C | 24A |
| PD | 68W |
| Tj max | 175°C |
| On-resistance (max) | |
| Rds(on) @ VGS = 10V | 19 mΩ |
| Rds(on) @ VGS = 6V | 23 mΩ |
| VGS(th) | 4V |
| Capacitance | |
| Ciss | 3869 pF |
| Coss | 190 pF |
| Crss | 37 pF |
| Gate charge | |
| Qg | 64 nC |
| Qgs | 22 nC |
| Qgd | 14 nC |
| Switching | |
| td(on) | 15 ns |
| tr | 35 ns |
| td(off) | 39 ns |
| tf | 32 ns |
| Body diode | |
| trr | 111 ns |
| Qrr | 427 nC |
Values from the MOSFET Selection Guide; confirm against the datasheet before design freeze.
Quick answers
- What is iMN220N20G?
- iMN220N20G is a 200V N-channel power MOSFET from inergy Technology Inc. (Hsinchu, Taiwan), in a PDFN5X6C-EP1-8L package.
- What are the key ratings of iMN220N20G?
- iMN220N20G is rated 200V VDS and 35A at 25°C, with Rds(on) of 19 mΩ max at VGS = 10V and 23 mΩ max at 6V.
- Is iMN220N20G in production?
- iMN220N20G is in mass production. Samples are available from inergy.
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